Methods of forming metal silicide

Details Methods of forming metal silicide Methods of forming metal silicide

Filed on

2007-10-16

Date issued

2007-10-16

Examiner

Geyer, Scott B. (Department: 2812)

Patent Class

Semiconductor device manufacturing: process

SubClass

Coating with electrically or thermally conductive material

SubSubClass

To form ohmic contact to semiconductive material

Other Related Categories

C257SE21593

Type

Reexamination Certificate

Status

active

Patent number

10609282

Description

ABSTRACT:
The invention includes methods of forming metal silicide having bulk resistance of less than 30 micro-ohms-centimeter. The metal of the metal silicide can be selected from Groups 3, 4, 8, 9 and 10 of the periodic table, with an exemplary metal being titanium. An exemplary method includes forming a titanium-containing layer directly against tantalum silicide. After the titanium-containing layer is formed directly against the tantalum silicide, titanium of the titanium-containing layer is converted to titanium silicide. Constructions formed in accordance with methodology of the present invention can be incorporated into circuitry associated with semiconductor devices, such as, for example, wordlines and bitlines.

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