Sealing and protecting integrated circuit bonding pads

Details Sealing and protecting integrated circuit bonding pads Sealing and protecting integrated circuit bonding pads

2007-08-28

2007-08-28

Ngô, Ngân V. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S625000, C438S652000, C438S669000

Reexamination Certificate

active

11173289

ABSTRACT:
A metal structure (600) for a bonding pad on integrated circuit wafers, which have interconnecting metallization (101) protected by an insulating layer (102) and selectively exposed by windows in the insulating layer. The structure comprises a patterned seed metal layer (104) positioned on the interconnecting metallization exposed by the window so that the seed metal establishes ohmic contact to the metallization as well as a practically impenetrable seal of the interface between the seed metal and the insulating layer. Further, a metal stud (301) is formed on the seed metal and aligned with the window. The metal stud is conformally covered by a barrier metal layer (501) and an outermost bondable metal layer (502).

REFERENCES:
patent: 2002/0192935 (2002-12-01), Joshi et al.
patent: 2003/0119211 (2003-06-01), Summerfelt et al.
patent: 2003/0155657 (2003-08-01), Tonegawa et al.
patent: 2004/0173905 (2004-09-01), Kamoshima et al.
patent: 2004/0238961 (2004-12-01), Cunningham

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