Double gate semiconductor device having a metal gate

Details Double gate semiconductor device having a metal gate Double gate semiconductor device having a metal gate

2007-08-14

2007-08-14

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257S410000, C257S412000, C257SE29022, C257SE29299, C257SE21411, C257SE21700

Reexamination Certificate

active

10720166

ABSTRACT:
A semiconductor device may include a substrate, an insulating layer formed on the substrate and a conductive fin formed on the insulating layer. The conductive fin may include a number of side surfaces and a top surface. The semiconductor device may also include a source region formed on the insulating layer adjacent a first end of the conductive fin and a drain region formed on the insulating layer adjacent a second end of the conductive fin. The semiconductor device may further include a metal gate formed on the insulating layer adjacent the conductive fin in a channel region of the semiconductor device.

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