Semiconductor device having screening electrode and method

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S401000, C257SE29162, C257SE21403, C257SE21407

Reexamination Certificate

active

11112570

ABSTRACT:
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a screening electrode spaced apart from a channel region.

REFERENCES:
patent: 6303961 (2001-10-01), Shibib
patent: 2006/0220151 (2006-10-01), Loechelt et al.
patent: 2006/0240625 (2006-10-01), Loechelt et al.

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