Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-02
2007-10-02
Tran, Long K. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000, C257SE29162, C257SE21403, C257SE21407
Reexamination Certificate
active
11112570
ABSTRACT:
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a screening electrode spaced apart from a channel region.
REFERENCES:
patent: 6303961 (2001-10-01), Shibib
patent: 2006/0220151 (2006-10-01), Loechelt et al.
patent: 2006/0240625 (2006-10-01), Loechelt et al.
Loechelt Gary H.
Zdebel Peter J.
Jackson Kevin B.
Semiconductor Components Industries L.L.C.
Tran Long K.
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