Method for forming gate of semiconductor device

Details Method for forming gate of semiconductor device Method for forming gate of semiconductor device

2007-12-18

2007-12-18

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S785000, C257SE21630

Reexamination Certificate

active

11109909

ABSTRACT:
Disclosed is a method for forming a gate of a semiconductor device capable of preventing a bridge from being created between adjacent gates due to a nitride polymer. The method includes the steps of forming a gate oxide film, a gate poly-Si film, and a gate W film successively on a semiconductor substrate; forming a pure SiN film and an oxide-rich SiN film successively on the gate W film as hard mask films; forming an oxide-rich SiON film on the oxide-rich SiN film as an anti-reflective coating film; patterning the oxide-rich SiON film, the oxide-rich SiN film, and the pure SiN film into the shape of a gate; and etching the gate W film, the gate poly-Si film, and the gate oxide film successively using the patterned pure SiN film as an etching barrier.

REFERENCES:
patent: 5977601 (1999-11-01), Yang et al.
patent: 5998100 (1999-12-01), Azuma et al.

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