Metal to polysilicon contact in oxygen environment

Details Metal to polysilicon contact in oxygen environment Metal to polysilicon contact in oxygen environment

2007-08-28

2007-08-28

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S751000, C257S754000, C257S761000, C257S767000, C257S773000

Reexamination Certificate

active

10734260

ABSTRACT:
A method for forming a contact capable of tolerating an O2environment up to several hundred degrees Celsius for several hours is disclosed. To slow down the metal oxide front of the metal layer at the metal-polysilicon interface, the metal layer is surrounded by one or more oxygen sink spacers and layers. These oxygen sink spacers and layers are oxidized before the metal layer at the bottom of the plug is oxidized. Accordingly, the conductive connection between the polysilicon and any device built on top of the barrier layer is preserved.

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