Method of forming a thin film transistor

Details Method of forming a thin film transistor Method of forming a thin film transistor

2007-08-07

2007-08-07

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21561

Reexamination Certificate

active

11142931

ABSTRACT:
A method of forming a thin film transistor comprising a deposition procedure of a microcrystal material layer and performing a plasma treatment procedure. The deposition procedure and the plasma treatment procedure are repeated. A buffer layer is thus formed on the gate electrode.

REFERENCES:
patent: 5210045 (1993-05-01), Possin et al.
patent: 5273920 (1993-12-01), Kwasnick et al.
patent: 6165917 (2000-12-01), Batey et al.
patent: 2002/0042167 (2002-04-01), Chae

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