Semiconductor device with capacitor element

Details Semiconductor device with capacitor element Semiconductor device with capacitor element

2007-10-30

2007-10-30

Pham, Hoai V (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000, C257SE27086

Reexamination Certificate

active

11518168

ABSTRACT:
After a capacitor forming portion is formed on a semiconductor substrate by patterning an insulating film and a silicon film, a sidewall insulating film is formed on each of the side surfaces of the capacitor forming portion. Then, the insulating film is selectively removed such that the silicon film is exposed in a depressed portion surrounded by the sidewall insulating film. Subsequently, a first metal film is deposited and then a thermal process is performed to change the silicon film into a first metal film. Thereafter, an insulating film and a second metal film are buried in the depressed portion. The insulating film composes the capacitor insulating film of a capacitor element. The first metal silicide film and the second metal film compose the lower and upper electrodes of the capacitor element, respectively.

REFERENCES:
patent: 5822175 (1998-10-01), Azuma
patent: 6300653 (2001-10-01), Pan
patent: 2003-234415 (2003-08-01), None
Kensuke Takahashi et al., “Dual Workfunction Ni-silicide/HfSION Gate Stacks by Phase-Controlled Full-Silicidation (PC-FUSI) Technique for 45 nm-node LSTP and LOP Devices”, IEEE, System Devices Research Laboratories, NEC Corporation, 2004.

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