Non-volatile memory cell for programmable logic device

Static information storage and retrieval – Systems using particular element – Semiconductive

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36518529, 365154, G11C 700

Patent

active

055239714

ABSTRACT:
The present invention provides a memory cell which includes a pair of flash EEPROM cells. One flash EEPROM cell is programmed and the other flash EEPROM cell is simultaneously erased by a single programming pulse. Because the configuration memory cell includes flash EEPROM cells, and therefore is non-volatile, a power down does not require reprogramming or refreshing of the configuration bit stored in the memory cell.

REFERENCES:
patent: 4128773 (1978-12-01), Troutman
patent: 4132904 (1979-01-01), Harari
patent: 4333166 (1982-06-01), Edwards
patent: 4348745 (1982-09-01), Schmitz
patent: 4467451 (1984-08-01), Moyer

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