Semiconductor device having SOI structure including a load...

Details Semiconductor device having SOI structure including a load... Semiconductor device having SOI structure including a load...

2007-08-14

2007-08-14

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S536000, C257S904000, C257SE27101

Reexamination Certificate

active

10841469

ABSTRACT:
It is an object to provide a semiconductor device having an SOI structure in which an electric potential of a body region in an element formation region isolated by a partial isolation region can be fixed with a high stability. A MOS transistor comprising a source region (51), a drain region (61) and an H gate electrode (71) is formed in an element formation region isolated by a partial oxide film (31). The H gate electrode (71) electrically isolates a body region (13) formed in a gate width W direction adjacently to the source region (51) and the drain region (61) from the drain region (61) and the source region (51) through “I” in a transverse direction (a vertical direction in the drawing), a central “-” functions as a gate electrode of an original MOS transistor.

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Goser; High-Density Static ESFI MOS Memory Cells; Oct. 1975; IEEE Journal of Solid-State Circuits; vol. 9, Issue 5; pp. 234-238.

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