Selective passivation of exposed silicon

Details Selective passivation of exposed silicon Selective passivation of exposed silicon

2007-12-25

2007-12-25

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S612000, C438S778000, C438S787000, C257SE21507

Reexamination Certificate

active

11087212

ABSTRACT:
A method for applying a passivation layer selectively on an exposed silicon surface includes use of a liquid phase solution supersaturated in silicon dioxide. The application is conducted at substantially atmospheric temperature and pressure and achieves an effective passivation layer in an abbreviated immersion time, and without subsequent heat treatment. In one embodiment, rapid coating of a wafer back side with silicon dioxide permits the use of a high-speed electroless process for plating the bond pad with a solder-enhancing material. In another embodiment, the walls of via holes and microvia holes in a silicon body may be passivated by applying the supersaturated solution prior to plugging the holes with conductive material.

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