Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-25
2007-12-25
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S620000, C438S638000, C438S672000
Reexamination Certificate
active
10502129
ABSTRACT:
The present invention provides an electronic device having high insulating reliability, in which metal portions of a circuit are not electrically conductive with each other via an adhesive layer even when the electronic device is used in high-temperature low-humidity conditions or high-temperature high-humidity conditions, and provides a production method for the electronic device, and a semiconductor device comprising the electronic device. In the electronic device in which a circuit formed by pattern formation of metal portions is attached via an adhesive layer to an insulating base, the adhesive layer, which contacts adjacent metal portions, is divided. Typically, the electronic device is one of a lead frame having a lead frame fixing tape, a TAB tape, and a flexible printed circuit board.
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Japan Patent Office, Office Action in related Japanese Patent Application No. 2002-308684, dated Mar. 6, 2007, (4 pages including translation).
Japanese Patent Office, Notice of Reasons For Rejection for Japanese Application Number 2002-308684, Sep. 10, 2007.
Le Dung A.
Tomoegawa Paper Co. Ltd.
Wood Herron & Evans
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