Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-21
2007-08-21
Pham, Thanhha S. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S333000, C257SE27091
Reexamination Certificate
active
10984925
ABSTRACT:
A method of manufacturing a semiconductor device provided with a MOS field effect transistor having a channel region of a first conduction type formed in a surface layer portion of a semiconductor substrate, a source region of a second conduction type formed on a rim portion of a trench made to penetrate through the channel region, and a base region of the first conduction type formed in the surface layer portion of the semiconductor substrate adjacently to the source region. The method includes: a step of forming a mask layer having a base-region forming opening corresponding to the base region and a trench forming opening corresponding to the trench on the semiconductor substrate in which the channel region is formed; a base-region forming step of introducing impurities through the base-region forming opening; a trench forming step of forming the trench through the trench forming opening; and a step of forming a gate insulation film on an inner wall surface of the trench.
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Pham Thanhha S.
Rabin & Berdo PC
Rohm & Co., Ltd.
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