Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-13
2007-11-13
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S059000, C257S072000, C257S350000, C257SE29151
Reexamination Certificate
active
11337514
ABSTRACT:
TFTs arranged in various circuits have structures that are suited for circuit functions, in order to improve operation characteristics and reliability of the semiconductor device, to lower consumption of electric power, to decrease the number of steps, to lower the cost of production and to improve the yield. The gradient of concentration of impurity element for controlling the conduction type in the LDD regions622and623of the TFT is such that the concentration increases toward the drain region. For this purpose, a tapered gate electrode607and a tapered gate-insulating film605are formed, and the ionized impurity element for controlling the conduction type is added to the semiconductor layer through the gate-insulating film605.
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Ohnuma Hideto
Ono Koji
Suzawa Hideomi
Yamagata Hirokazu
Yamazaki Shunpei
Ngo Ngan V.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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