Method of fabricating n-type semiconductor diamond, and...

Details Method of fabricating n-type semiconductor diamond, and... Method of fabricating n-type semiconductor diamond, and...

2007-02-06

2007-02-06

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S455000

Reexamination Certificate

active

11013450

ABSTRACT:
An n-type diamond epitaxial layer20is formed by processing a single-crystalline {100} diamond substrate10so as to form a {111} plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond {111} plane. Further, a combination of the n-type semiconductor diamond, p-type semiconductor diamond, and non-doped diamond, obtained in the above-described way, as well as the use of p-type single-crystalline {100} diamond substrate allow for a pn junction type, a pnp junction type, an npn junction type and a pin junction type semiconductor diamond to be obtained.

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“New Diamond,” Japan New Diamond Forum, c. 2001, vol. 17, No. 4, pp. 10-16.

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