Post vertical interconnects formed with silicide etch stop...

Details Post vertical interconnects formed with silicide etch stop... Post vertical interconnects formed with silicide etch stop...

2007-12-11

2007-12-11

Deo, Duy-Vu N (Department: 1765)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S621000, C438S719000, C438S720000

Reexamination Certificate

active

10611246

ABSTRACT:
A method to form a vertical interconnect advantageous for high-density semiconductor devices. A conductive etch stop layer, preferably of cobalt silicide, is formed. The etch stop layer may be in the form of patterned lines or wires. A layer of contact material is formed on and in contact with the etch stop layer. The layer of contact material is patterned to form posts. Dielectric is deposited over and between the posts, then the dielectric planarized to expose the tops of the posts. The posts can serve as vertical interconnects which electrically connect a next conductive layer formed on and in contact with the vertical interconnects with the underlying etch stop layer. The patterned dimension of vertical interconnects formed according to the present invention can be substantially the same as the minimum feature size, even at very small minimum feature size.

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