Photoresist undercoat-forming material and patterning process

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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C430S271100, C430S272100, C430S914000, C430S919000, C430S920000, C430S921000, C430S925000, C430S325000, C430S326000, C430S313000, C430S316000, C430S317000, C430S318000, C430S323000, C430S329000

Reexamination Certificate

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10952834

ABSTRACT:
An undercoat-forming material comprising a novolak resin having a fluorene or tetrahydrospirobiindene structure, an organic solvent, an acid generator, and a crosslinker, optionally combined with an intermediate layer having an antireflective effect, has an absorptivity coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3and Cl2. BCl3gases for substrate processing.

REFERENCES:
patent: 6316165 (2001-11-01), Pavelchek et al.
patent: 6420088 (2002-07-01), Angelopoulos et al.
patent: 6506497 (2003-01-01), Kennedy et al.
patent: 2002/0086934 (2002-07-01), Kawaguchi et al.
patent: 2003/0113662 (2003-06-01), Kato et al.
patent: 2003/0166796 (2003-09-01), Imaizumi et al.
patent: 3-14815 (1991-01-01), None
patent: 6-118651 (1994-04-01), None
patent: 09-31147 (1997-02-01), None
patent: 9-31147 (1997-02-01), None
patent: 9-110938 (1997-04-01), None
patent: 10-324748 (1998-12-01), None
patent: 11-24271 (1999-01-01), None
patent: 11-302382 (1999-11-01), None
patent: 2000-294504 (2000-10-01), None
patent: 2001-40293 (2001-02-01), None
patent: 2002-14474 (2002-01-01), None
patent: 2002-55456 (2002-02-01), None
patent: 2002-214777 (2002-07-01), None
Chem. Abstract 126:225983—English abstract for JP 9-31147.
English abstract for JP 3-14815 as provided by JPO.
Chemical Abstract 1997:247694—English abstract for JP 9-31147.
Machine-assisted English translation of JP 09-031147 (Ishihara et al) provided by JPO.
Brunsvold et al., “Evaluation of a deep UV bilayer resist for sub-half micron lithography”, SPIE, vol. 1925, No. 377, (1993), pp. 377-387.
Hatakeyama et al., “Investigation of discrimination enhancement in polysilsesquioxane based positive resist for ArF lithography”, SPIE, vol. 3333 (1998), pp. 62-72.
Schaedeli et al., “Evaluation of materials for 193-nm lithography”, Journal of Photpolymer Science and Technology, vol. 9, No. 3 (1996), pp. 435-446.
Kwong et al., “IBM 193 nm bilayer resist: materials, lithographic performance and optimization”, SPIE, vol. 4345 (2001), pp. 50-57.
Lynch et al., “Properties and performance of near UV reflectivity control layers”, SPIE, vol. 2195 (1994), pp. 225-235.

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