Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-28
2007-08-28
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S059000, C257S072000, C257S348000
Reexamination Certificate
active
10763354
ABSTRACT:
A transistor having a gate electrode, a source electrode, a drain electrode, a dielectric material and a channel region disposed between the source electrode and drain electrode. The channel region includes a portion doped with an impurity to change the fixed charge density within the portion relative to a remainder of the channel region.
REFERENCES:
patent: 4389481 (1983-06-01), Poleshuk
patent: 4559238 (1985-12-01), Bujatti et al.
patent: 4589026 (1986-05-01), Ozawa et al.
patent: 4598305 (1986-07-01), Chiang et al.
patent: 4622656 (1986-11-01), Kamiya et al.
patent: 4887255 (1989-12-01), Handa et al.
patent: 4984043 (1991-01-01), Vinal
patent: 5107314 (1992-04-01), Kahng et al.
patent: 5248627 (1993-09-01), Williams
patent: 5525822 (1996-06-01), Vinal
patent: 5607868 (1997-03-01), Chida et al.
patent: 5656844 (1997-08-01), Klein
patent: 5719081 (1998-02-01), Racanelli
patent: 5744864 (1998-04-01), Cillessen et al.
patent: 5936291 (1999-08-01), Makita et al.
patent: 6027978 (2000-02-01), Gardner et al.
patent: 6078082 (2000-06-01), Bulucea
patent: 6229188 (2001-05-01), Aoki
patent: 6255130 (2001-07-01), Kim
patent: 6255655 (2001-07-01), McCroskey et al.
patent: 6362499 (2002-03-01), Moise et al.
patent: 6391462 (2002-05-01), Jang
patent: 6465308 (2002-10-01), Cheng et al.
patent: 6489632 (2002-12-01), Yamazaki et al.
patent: 6503805 (2003-01-01), Wang et al.
patent: 6561174 (2003-05-01), Afshari
patent: 6878962 (2005-04-01), Kawasaki et al.
patent: 2001/0000494 (2001-04-01), Manning
patent: 2002/0153587 (2002-10-01), Adkisson et al.
patent: 2002/0171085 (2002-11-01), Suzawa et al.
patent: 2003/0013261 (2003-01-01), Asano
patent: 2003/0104659 (2003-06-01), Arakawa et al.
patent: 2003/0139026 (2003-07-01), Lucovsky
patent: 2003/0180996 (2003-09-01), Yamazaki et al.
patent: 2003/0186489 (2003-10-01), Ishikawa
patent: 2003/0207502 (2003-11-01), Yamazaki et al.
patent: 2003/0218221 (2003-11-01), Wager, III et al.
patent: 2003/0218222 (2003-11-01), Wager, III et al.
patent: 2003/0219530 (2003-11-01), Yamazaki et al.
patent: 2003/0224550 (2003-12-01), Kokubo et al.
patent: 2004/0023432 (2004-02-01), Haga
patent: 0040076 (1986-03-01), None
patent: 2003-086808 (2003-03-01), None
Proceedings of the IEEE, Proceedings Letters, Nov. 1968, pp. 2094-2095.
Extended abstracts of the 2000 International Conference on Solid State Devices and Materials; Aug. 29-31, 2000, Sendai Intl Center, pp. 128-129.
Ohtomo, “Novel Semiconductor Technologies of ZnO Films towards . . . ”, IEICE Trans. Electron., vol. E83-C, No. 10, Oct. 2000, pp. 1614-1617.
Erdem Fazli
Hewlett--Packard Development Company, L.P.
Purvis Sue A.
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