Semiconductor device, method for producing the same, and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE29255, C438S300000

Reexamination Certificate

active

10899183

ABSTRACT:
A semiconductor device1910comprises a semiconductor substrate100including an isolation region101and an active region102, a gate electrode104provided on the active region102via a gate insulating film103, part of a side of the gate electrode104being covered with a gate electrode side wall insulating film105, and a source region106and a drain region106provided on opposite sides of the gate electrode104via the gate electrode side wall insulating film105. At least one of the source region106and the drain region106has a second surface for contacting a contact conductor. The second surface is tilted with respect to a first surface A–A′. An angle between the second surface and a surface of the isolation region is 80 degrees or less.

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