Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-13
2007-02-13
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29255, C438S300000
Reexamination Certificate
active
10899183
ABSTRACT:
A semiconductor device1910comprises a semiconductor substrate100including an isolation region101and an active region102, a gate electrode104provided on the active region102via a gate insulating film103, part of a side of the gate electrode104being covered with a gate electrode side wall insulating film105, and a source region106and a drain region106provided on opposite sides of the gate electrode104via the gate electrode side wall insulating film105. At least one of the source region106and the drain region106has a second surface for contacting a contact conductor. The second surface is tilted with respect to a first surface A–A′. An angle between the second surface and a surface of the isolation region is 80 degrees or less.
REFERENCES:
patent: 5869375 (1999-02-01), Choi et al.
patent: 5902125 (1999-05-01), Wu
patent: 5949105 (1999-09-01), Moslehi
patent: 6455366 (2002-09-01), Lee
patent: 6906382 (2005-06-01), Nakabayashi
patent: 817392 (1998-01-01), None
patent: 820096 (1998-01-01), None
patent: 887843 (2000-01-01), None
patent: 000969516 (2000-01-01), None
patent: 61-196577 (1986-08-01), None
patent: 63-179576 (1988-07-01), None
patent: 3-145343 (1991-06-01), None
patent: 10-335660 (1998-12-01), None
patent: 00/01015 (2000-01-01), None
Adachi Kouichiro
Iwata Hiroshi
Kakimoto Seizo
Nakano Masayuki
Shibata Akihide
Birch & Stewart Kolasch & Birch, LLP
Sharp Kabushiki Kaisha
Smoot Stephen W.
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