SOI component with increased dielectric strength and...

Details SOI component with increased dielectric strength and... SOI component with increased dielectric strength and...

2007-11-27

2007-11-27

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S355000, C257S401000

Reexamination Certificate

active

10943491

ABSTRACT:
A semiconductor component arrangement comprises a semiconductor substrate of a first conduction type, an insulation layer arranged on the substrate, and a semiconductor layer arranged on the insulation layer. A semiconductor component is formed in said semiconductor layer. The semiconductor component includes a first semiconductor zone of a first conduction type, a second semiconductor zone of a second conduction type adjoining the first semiconductor zone, and a third semiconductor zone which is doped more heavily than the second semiconductor zone and positioned at a distance from the first semiconductor zone. The semiconductor zone further comprises a fourth semiconductor zone of the second conduction type. The fourth semiconductor zone has a first section formed in the second semiconductor zone and a second section formed in the underlying substrate. The first section and the second section of the fourth semiconductor zone are electrically conductively connected to one another through the insulation layer.

REFERENCES:
patent: 6121661 (2000-09-01), Assaderaghi et al.
patent: 6297534 (2001-10-01), Kawaguchi et al.
patent: 6873012 (2005-03-01), Stecher et al.
patent: 2002/0113275 (2002-08-01), Stecher et al.
patent: 2004/0214410 (2004-10-01), Fricke et al.

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