Method and apparatus for a low write current MRAM having a...

Details Method and apparatus for a low write current MRAM having a... Method and apparatus for a low write current MRAM having a...

2007-08-14

2007-08-14

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S157000

Reexamination Certificate

active

10735114

ABSTRACT:
An invention is provided for a low write current MRAM. Each MRAM cell includes a word line and a bit line. A magnetic device is disposed at the intersection of the word line and the bit line. Disposed at either end of the magnetic device is a writing magnet. The pair of writing magnets switches a magnetic alignment of the magnetic device during a write operation. In aspect, the pair of writing magnets and the magnetic device can be aligned along a long axis of the memory cell, which generally is not aligned with either the word line or the bit line.

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patent: 2005/0105328 (2005-05-01), Ho

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