Self-aligned contact wiring process for SI devices

Details Self-aligned contact wiring process for SI devices Self-aligned contact wiring process for SI devices

1996-03-20

1998-08-11

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438637, 438639, H01L 2128

Patent

active

057927030

ABSTRACT:
A method of making electrical contacts to device regions in a substrate is taught. A first set of contacts are self-aligning and borderless and a second set of contacts are bordered. The method comprises the steps of providing a first insulating layer over the substrate and forming the first set of contacts in a self-aligned and borderless manner. This is followed by forming a second insulating layer over said first insulating layer, in which the second set of contacts that are bordered to the gate electrode and peripheral diffusions are formed through the first and second insulating layers. In addition, bordered contacts to the first set of borderless contacts are formed through the second insulating layer.

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J. Gambino, T. Ohiwa, D. Dobuzinsky, M. Armacost, S. Yoshikawa, B. Cunningham, A S.sub.i 3N.sub.4 Etch Stop Stop Process For Borderles Contacts In 0.25 um Devices, 1995 VMIC Conference, Jun. 27-29 pp. 558-564.

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