Method for forming a film over a spin-on-glass layer by means of

Details Method for forming a film over a spin-on-glass layer by means of Method for forming a film over a spin-on-glass layer by means of

1996-12-19

1998-08-11

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438781, 438782, H01L 21316

Patent

active

057927022

ABSTRACT:
A method for forming an oxide film over a spin-on-glass (SOG) layer by a plasma-enhanced chemical-vapor deposition (PECVD) is disclosed. The SOG layer is pre-processed in a forming gas of hydrogen and nitrogen in a PECVD chamber. Then the oxide film is formed over the SOG layer by means of the PECVD process in the PECVD chamber.

REFERENCES:
patent: 5231057 (1993-07-01), Doki et al.
patent: 5270267 (1993-12-01), Oullet
patent: 5403780 (1995-04-01), Jain et al.
patent: 5413963 (1995-05-01), Yen et al.
patent: 5441765 (1995-08-01), Ballance et al.
patent: 5459105 (1995-10-01), Matsuura
patent: 5518959 (1996-05-01), Jang et al.
patent: 5567658 (1996-10-01), Wang et al.
patent: 5601664 (1997-02-01), Kosa et al.
patent: 5603075 (1997-02-01), Stoll et al.
Ito et al., Application of Surface Reformed Thick Spin-on-Glass to MOS Device Planarization, J. Electrochem. Soc., 137:1212-1218, Apr. 1990.
Matsuura et al., An Advanced Interlayer Dielectric System with Partially Converted Organic SOG by Using Plasma Treatment, VMIC Conference, 113-115, 1993.
Wang et al., A Study of Plasma Treatments On Siloxane SOG, VMIC Conference, 1994.

Affiliated with

Also associated with

Rating

Method for forming a film over a spin-on-glass layer by means of does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a film over a spin-on-glass layer by means of, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a film over a spin-on-glass layer by means of will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-388629