Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-08-21

2007-08-21

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S049000, C257S050000, C257S051000, C257S063000, C257S064000, C257S065000

Reexamination Certificate

active

10640939

ABSTRACT:
The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate electrode and a second electrode being in contact with the first gate electrode and a gate insulating film. Further, the LDD is formed by using the first gate electrode as a mask, and source and drain regions are formed by using the second gate electrode as the mask. Then, the LDD overlapping with the second gate electrode is formed. This structure provides the thin film transistor with high reliability.

REFERENCES:
patent: 3933529 (1976-01-01), Goser
patent: 4394182 (1983-07-01), Maddox, III
patent: 4851363 (1989-07-01), Troxell et al.
patent: 5217910 (1993-06-01), Shimizu et al.
patent: 5247190 (1993-09-01), Friend et al.
patent: 5254490 (1993-10-01), Kondo
patent: 5323042 (1994-06-01), Matsumoto
patent: 5358879 (1994-10-01), Brady et al.
patent: 5399502 (1995-03-01), Friend et al.
patent: 5401982 (1995-03-01), King et al.
patent: 5413945 (1995-05-01), Chien et al.
patent: 5508209 (1996-04-01), Zhang et al.
patent: 5528397 (1996-06-01), Zavracky et al.
patent: 5532176 (1996-07-01), Katada et al.
patent: 5583369 (1996-12-01), Yamazaki et al.
patent: 5594569 (1997-01-01), Konuma et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5686328 (1997-11-01), Zhang et al.
patent: 5693959 (1997-12-01), Inoue et al.
patent: 5705424 (1998-01-01), Zavracky et al.
patent: 5719588 (1998-02-01), Johnson
patent: 5736750 (1998-04-01), Yamazaki et al.
patent: 5742363 (1998-04-01), Bae
patent: 5764206 (1998-06-01), Koyama et al.
patent: 5830787 (1998-11-01), Kim
patent: 5912492 (1999-06-01), Chang et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5949107 (1999-09-01), Zhang
patent: 5962872 (1999-10-01), Zhang et al.
patent: 5965919 (1999-10-01), Yoo
patent: 6001714 (1999-12-01), Nakajima et al.
patent: 6008869 (1999-12-01), Oana et al.
patent: 6030667 (2000-02-01), Nakagawa et al.
patent: 6049092 (2000-04-01), Konuma et al.
patent: 6087679 (2000-07-01), Yamazaki et al.
patent: 6096585 (2000-08-01), Fukuda et al.
patent: 6114715 (2000-09-01), Hamada
patent: 6133074 (2000-10-01), Ishida et al.
patent: 6140667 (2000-10-01), Yamazaki et al.
patent: 6165824 (2000-12-01), Takano et al.
patent: 6166396 (2000-12-01), Yamazaki
patent: 6166414 (2000-12-01), Miyazaki et al.
patent: 6180957 (2001-01-01), Miyasaka et al.
patent: 6198133 (2001-03-01), Yamazaki et al.
patent: 6222238 (2001-04-01), Chang et al.
patent: 6274887 (2001-08-01), Yamazaki et al.
patent: 6281552 (2001-08-01), Kawasaki et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6307214 (2001-10-01), Ohtani et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6348368 (2002-02-01), Yamazaki et al.
patent: 6365933 (2002-04-01), Yamazaki et al.
patent: 6479333 (2002-11-01), Takano et al.
patent: 6507069 (2003-01-01), Zhang et al.
patent: 6515338 (2003-02-01), Inumiya et al.
patent: 6541294 (2003-04-01), Yamazaki et al.
patent: 6590230 (2003-07-01), Yamazaki et al.
patent: 6646287 (2003-11-01), Ono et al.
patent: 6664145 (2003-12-01), Yamazaki et al.
patent: 6670641 (2003-12-01), Fukuda et al.
patent: 6773971 (2004-08-01), Zhang et al.
patent: 6867431 (2005-03-01), Konuma et al.
patent: 6909114 (2005-06-01), Yamazaki
patent: 2002/0134983 (2002-09-01), Yamazaki
patent: 2005/0104068 (2005-05-01), Yamazaki
patent: 2005/0110016 (2005-05-01), Yamazaki
patent: 0 583 370 (1994-03-01), None
patent: 0 589 478 (1994-03-01), None
patent: 0588370 (1994-03-01), None
patent: 0 738 012 (1996-10-01), None
patent: 60-127761 (1985-07-01), None
patent: 03-250632 (1991-11-01), None
patent: 04-165629 (1992-06-01), None
patent: 04-258160 (1992-09-01), None
patent: 04-369271 (1992-12-01), None
patent: 05-102483 (1993-04-01), None
patent: 06-148685 (1994-05-01), None
patent: 06-260645 (1994-09-01), None
patent: 06-260646 (1994-09-01), None
patent: 07-130652 (1995-05-01), None
patent: 07-235680 (1995-09-01), None
patent: 08-078329 (1996-03-01), None
patent: 08-264784 (1996-10-01), None
patent: 08-274336 (1996-10-01), None
patent: 9-116167 (1997-05-01), None
patent: 09-191111 (1997-07-01), None
patent: 09-293600 (1997-11-01), None
patent: 10-065181 (1998-03-01), None
patent: 10-092576 (1998-04-01), None
patent: 10-104659 (1998-04-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
patent: 10-163498 (1998-06-01), None
patent: 10-189979 (1998-07-01), None
patent: 10-233511 (1998-09-01), None
patent: 10-247735 (1998-09-01), None
patent: 10-294280 (1998-11-01), None
patent: 11-191628 (1999-07-01), None
patent: 11-345767 (1999-12-01), None
patent: 11-354442 (1999-12-01), None
patent: WO90/13148 (1990-11-01), None
Terada, et al, “Half-V Switching Mode FLCD,” Proceedings of the 46th Applied Physics Association Lectures, 28p-V-8, p. 1316, Mar. (1999).
Yoshihara, T. et al, “Time Division Full Color LCD by Ferroelectric Liquid Crystal,” EKISHO, vol. 3, No. 3, pp. 190-194, (1999).
Shenk, H. et al, “Polymers for Light Emitting Diodes,” EURODISPLAY '99, Proceedings of the 19thInternational Display Research Conference, Sep. 6-9, 1999, Berlin, Germany, pp. 33-37, (1999).
Hatano, M. et al, “A Novel Self-Aligned Gate-Overlapped LDD Poly-Si TFT with High Reliability and Performance,” IDEM Technical Digest '97, International Electron Devices Meeting, Dec. 7-10, 1997, Washington DC, pp. 523-526, (1997).
Inui, S. et al, “Thresholdless Antiferroelectricity in Liquid Crystals and its Application to Displays,” J. Matter Chem., vol. 6, No. 4, pp. 671-673 (1996).
Yoshisa, T. et al, “A Full Color Thresholdless Antiferroelectric LCD Exhibiting Wide Viewing Angle with Fast Response Time,” SID 97 Digest, pp. 841-844 (1997).
Furue, H. et al, “Characteristics and Driving Scheme of Polyester Stabilized Monostable FLCD Exhibiting Fast Response Time and High Contrast Ratio with Gray-Scale Capability,” SID 98 Digest, pp. 782-785 (1998).
Webster's II New Riverside University Dictionary, p. 839 (1984).
U.S. Appl. No. 09/435,154 (pending) to Yamazaki et al filed Nov. 8, 1999, including specification, claims, abstract, drawings and PTO filing receipt.
U.S. Appl. No.09/441,025 (pending) to Nakajima et al filed Nov. 16, 1999, including specification, claims, abstract, drawings and PTO filing receipt.
Shimokawa, R. et al, “Characterization of High-Efficiency Cast-Si Solar Cell Wafers by MBIC Measurement,” Japanese Journal of Applied Physics, vol. 27, no. 5, pp. 751-758, May, (1988).
European Patent Office search report for application no. EP 99 12 2785.1, dated Nov. 21, 2000.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3885772