Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2007-08-14
2007-08-14
Nguyen, Dung (Michael) T. (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S045010
Reexamination Certificate
active
11038702
ABSTRACT:
A semiconductor laser device has a striped structure for injecting carriers and includes a first electrically-conductive cladding layer, an active layer, and a second electrically-conductive cladding layer that are formed on a substrate. A width of the stripe changes along a resonator direction, a difference between L1 and Lt is within 200 μm, and Rf<Rr, where L1 is a distance from a front end face to a position at which the width of the stripe is minimal, L is a length of a resonator of the semiconductor laser device, Rf is a reflectivity of the front end face, Rr is a reflectivity of a rear end face, and Lt is a distance expressed by L×Loge(Rf)/Loge(Rf×Rr). The saturation of a light emission efficiency is suppressed in a high power operation, allowing a stable fundamental transverse mode oscillation.
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Notification of reasons for refusal; JP application No. 2004-111438.
“Semiconductor Laser”, Osmsha, 1stedition, pp. 238, 1994, Kenichi IGA; with partial translation.
Hamre Schumann Mueller & Larson P.C.
Matsushita Electric - Industrial Co., Ltd.
Nguyen Dung (Michael) T.
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