Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2007-12-11

2007-12-11

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S303000, C257S306000, C257S310000, C438S003000, C438S244000, C438S253000, C438S387000

Reexamination Certificate

active

11120995

ABSTRACT:
A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlXZr(1-X)OY(0.05≦x≦0.3), hereby being capable of preventing, in a process of forming a capacitor of MIM (Metal Insulator Metal) structure, dielectric breakdown of a capacitor insulating film while a relative dielectric constant of a metal oxide film used as the capacitor insulating film is kept high.

REFERENCES:
patent: 2002/0058391 (2002-05-01), Kim et al.
patent: 2002/0163025 (2002-11-01), Vaartstra et al.
patent: 2004/0072401 (2004-04-01), Iizuka et al.
patent: H11-233726 (1999-08-01), None
patent: 2002-222934 (2002-08-01), None

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