Semiconductor device including a discontinuous film and...

Details Semiconductor device including a discontinuous film and... Semiconductor device including a discontinuous film and...

2007-12-11

2007-12-11

Lewis, Monica (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S762000, C257S763000, C257S764000, C257S765000

Reexamination Certificate

active

11239077

ABSTRACT:
Disclosed is a semiconductor device comprising a semiconductor substrate, a first insulating film formed above the semiconductor substrate, Cu wiring buried in the first insulating film, a second insulating film formed above the Cu wiring, and a discontinuous film made of at least one metal selected from the group consisting of Ti, Al, W, Pd, Sn, Ni, Mg and Zn, or a metal oxide thereof and interposed at an interface between the Cu wiring and the second insulating film.

REFERENCES:
patent: 6342444 (2002-01-01), Higashi et al.
patent: 6818546 (2004-11-01), Saito et al.
patent: 2005/0022745 (2005-02-01), Nakano et al.
patent: 2006/0060977 (2006-03-01), Kawanoue

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