Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2007-08-07
2007-08-07
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S200000, C365S225700
Reexamination Certificate
active
11028313
ABSTRACT:
A program element has a magnetic layer electrically connected between first and second nodes. At least a portion of the magnetic layer forms a link portion designed to be blown with external laser irradiation. The magnetic layer is provided in the same layer as and with the same structure as a tunneling magneto-resistance element in an MTJ memory cell. An electrical contact between the magnetic layer and respective one of the first and second nodes has the same structure as the electrical contact between the tunneling magneto-resistance element and an interconnection provided in the same metal interconnection layer as respective one of the first and second nodes in the MTJ memory cell.
REFERENCES:
patent: 6671213 (2003-12-01), Ohtani
patent: 6683807 (2004-01-01), Hidaka
patent: 6751149 (2004-06-01), Seyyedy et al.
patent: 6778432 (2004-08-01), Ohtani
patent: 6917540 (2005-07-01), Ooishi
patent: 2004/0057281 (2004-03-01), Ooishi
patent: 2002-117684 (2002-04-01), None
Scheuerlein, et al. “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell” IEEE International Solid-State Circuits Conference (2000) TA 7.2.
Durlam, et al. “Nonvolatile RAM Based on Magnetic Tunnel Junction Elements” IEEE International Solid-State Circuits Conference (2000) TA 7.3.
Naji, et al. “A 256kb 3.0V 1T1MJT Nonvolatile Magnetoresistive RAM” IEEE International Solid-State Circuits Conference (2001) 7.6.
McDermott Will & Emery LLP
Nguyen Van-Thu
Renesas Technology Corp.
LandOfFree
Thin film magnetic memory device provided with program element does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film magnetic memory device provided with program element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film magnetic memory device provided with program element will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3883379