Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-02-13
2007-02-13
Pizarro, Marcos D. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S176000, C257SE21421
Reexamination Certificate
active
10892340
ABSTRACT:
The invention pertains to thin film constructions comprising NVRAM devices built over a versatile substrate base. In particular aspects, a device includes a body region, and further include first and second diffusion regions formed in the body region. A channel region is in the body region between the first and second diffusion regions. A gate insulator stack is above the channel region, and a gate is over the gate insulator stack. The gate insulator stack includes a floating plate charge center which is electrically connected to the second diffusion region. The memory device includes a diode which connects the body region to the second diffusion region such that the floating plate is charged when the diode is reversed biased. The invention also includes electronic systems comprising novel TFT-based NVRAM devices.
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Pizarro Marcos D.
Wells St. John P.S.
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