Method of forming multilayer interconnection structure, and...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257S774000

Reexamination Certificate

active

10875590

ABSTRACT:
Method of forming a multilayer interconnection structure that includes a contact hole for reliably connecting between layers, without damaging a substrate. A column shaped mask material is formed in a position for forming a contact hole using a resist, and an interlayer insulating film is applied to the whole surface of the substrate excluding the mask material. Then, the mask material is removed by a method such as peeling. As a result, a hole generated thereby is used as a contact hole.

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patent: A 10-116905 (1998-05-01), None
patent: A 2000-269336 (2000-09-01), None
patent: 1997-0072086 (1997-11-01), None

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