Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-12-04
2007-12-04
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S233100, C365S230080, C365S240000
Reexamination Certificate
active
11190222
ABSTRACT:
Disclosed is a method of controlling an MRS operation in a memory device which can prevent an unnecessary MRS operation due to a malfunction of the memory device at a time when the memory device exits from a self-refresh mode. According to this method, external addresses are used to intercept a mode register set command signal that enables the MRS operation at a time point at which the memory device exits from the self-refresh mode.
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Ha Sung Joo
Kim Tae Yun
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Lam David
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