Method for forming hemispherical grained silicon

Details Method for forming hemispherical grained silicon Method for forming hemispherical grained silicon

1995-11-03

1997-06-03

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 84, 117 95, C30B 2504

Patent

active

056349742

ABSTRACT:
A method of forming HSG is disclosed, in which a layer of starting material is formed on a wafer, the layer of starting material is seeded with a species and the seeded layer is annealed. The seeding and annealing steps can be performed under different conditions and can be varied independently of each other.

REFERENCES:
patent: 5340765 (1994-08-01), Dennison et al.
patent: 5407534 (1995-04-01), Thakur
patent: 5418180 (1995-05-01), Brown
patent: 5486488 (1996-02-01), Kamiyama
"An advanced technique for fabricating hemispherical-grained HSG silicon storage electrodes"; Watanabe, et al; IEEE Trans Electron Devices (1995), 42(2) pp. 295-300.
"Hemispherical grained silicon (HSG-Si) formation on in-situ phosphorous doped amorphous-Si using the seeding method"; Watanabe, et al (Microelectron Research Labs., NEC Corp. 1992 pp. 422-4; ISBN: 4-930813-50-6 (Abstract only).

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