Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-12
2007-06-12
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29013
Reexamination Certificate
active
11127224
ABSTRACT:
Disclosed is a trench MOSFET, including: a trench gate structure having a gate electrode and a gate insulating film; an n-type diffusion layer formed to face the gate electrode via the gate insulating film at an upper portion of the trench; a p-type base layer formed to face the gate electrode via the gate insulating film at a lower portion than the upper portion; an n-type epitaxial layer locating to face the gate electrode via the gate insulating film at a further lower portion than the lower portion; a metal layer formed departing from the trench in parallel with a depth direction of the trench, penetrating the n-type diffusion layer and the p-type base layer, to reach the n-type epitaxial layer; and a p-type layer with higher impurity concentration than the p-type base layer, locating to be in contact with the p-type base layer and the metal layer.
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patent: 6762098 (2004-07-01), Hshieh et al.
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Cheng et al., “Improving the CoolMOS™ Body-Diode Switching Performance with Integrated Schottky Contacts”, Proc. ISPSD '03, Cambridge, UK, pp. 304-307, Apr. 2003.
Kawaguchi Yusuke
Nakagawa Akio
Ono Syotaro
Yamaguchi Yoshihiro
Dickey Thomas L.
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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