Method of forming an aluminum conductor with highly oriented gra

Details Method of forming an aluminum conductor with highly oriented gra Method of forming an aluminum conductor with highly oriented gra

1989-12-18

1990-12-11

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156647, 156656, 156657, 1566591, 156665, 21912166, 357 71, 437194, 437203, 437248, B44C 122, C23F 102, C03C 1500, C03C 2506

Patent

active

049768093

ABSTRACT:
Aluminum alloy polycrystalline conductors having reduced electro-migration tendencies are formed in a semiconductor device by applying a thin film of aluminum or aluminum alloy to an array of shallow holes provided in a dielectric layer the array being patterned according to a desired interconnection pattern. A thin film of aluminum or aluminum alloy is then scanned with a laser beam sufficient to melt the film and cause it to planarize. An oriented crystal structure is formed with grain boundaries being aligned orthogonally to the rows and column of the hole pattern. A photoresist mask is then aligned with the resultant crystal structure in a manner such that boundaries extend substantially only in a direction across the width of the desired conductor lines. The aluminum which is present in the crystal structure outside the desired conductor line is then removed by plasma etching through the mask.

REFERENCES:
patent: 4124419 (1989-03-01), Lee et al.
patent: 4267012 (1981-05-01), Pierce et al.
patent: 4566177 (1986-01-01), Vande Ven et al.
patent: 4720908 (1988-01-01), Wills
patent: 4744858 (1988-05-01), McDavid et al.
patent: 4758533 (1988-07-01), Magee et al.
patent: 4800179 (1989-01-01), Mukai

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