Semiconductor storage elements, semiconductor device...

Details Semiconductor storage elements, semiconductor device... Semiconductor storage elements, semiconductor device...

2007-12-04

2007-12-04

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S368000, C257S405000, C257S406000, C257S411000

Reexamination Certificate

active

10848323

ABSTRACT:
A semiconductor storage element has a memory function body on opposite sides of a gate electrode formed on a semiconductor substrate. Each end of source/drain regions is located in the semiconductor substrate just under the memory function body and offset with respect to an edge of the gate electrode in a gate length direction to improve efficiency of electric charge injection into the memory function body. A storage state in the memory function body is found by detecting a amount of current between the source/drain regions, which current changes depending on the amount of the electric charge retained in the charge retention portion.

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