Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1996-04-01
1998-08-11
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430313, 430394, 427 98, G03F 700
Patent
active
057925941
ABSTRACT:
A process for metallizing an integrated circuit chip to form an interconnecting pattern for the chip's input/output terminals, wherein the process can be performed while the chip is still a part of the wafer on which it is fabricated and before separation into individual chips. The invention uses photodefinable resins as masks that form permanent dielectric layers of a multilayer structure with which interconnecting paths and terminals are defined on the surface of the chip. The process further employs conversion techniques that enable the interconnecting paths to be formed from metals other than aluminum, such that the electrical performance of the chip is enhanced. The use of the photodefinable resins renders the process of this invention conducive to inline processing techniques, thereby reducing processing costs while promoting high throughput and short cycle times. The process of this invention also enables the interconnecting paths to be readily customized for adaption to changing configuration requirements at the next assembly level, while also promoting greater dimensional precision of bumps formed at the terminals.
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Aschenbrenner et al., "Electroless Nickel/Copper Plating as a New Bump Metallization," Proceedings of the 1994 International Conference on Multi-Chip Modules, pp. 390-395.
Pai et al., "Copper as the Future Interconnection Material," IEEE, VLSI Multilevel Interconnection Conference (Jun. 12-13, 1989), pp. 258-264.
Simon et al., "Electroless Deposition of Bumps for TAB Technology," Proceedings of the 40th ECTC Conference, Las Vegas (1990), pp. 412-417.
Pai et al., "Selectively Deposited Nickel Film for Via Filling," IEEE Electron Device Letters, vol. 10, No. 6 (Jun. 1989), pp. 257-259.
Brown Vernon L.
Magera Yaroslaw A.
Duda Kathleen
Fekete Douglas D.
McIntyre John B.
Motorola Inc.
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