Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-28
2007-08-28
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S261000, C257S314000, C257S321000, C438S288000
Reexamination Certificate
active
10905056
ABSTRACT:
A memory cell includes an N-type well, three P-type doped regions, a first stacked dielectric layer, a first gate, a second stacked dielectric layer, and a second gate. The three P-type doped regions are formed on the N-well. The first dielectric stack layer is formed on the N-type well and between the first doped region and the second doped region from among the three P-type doped regions. The first gate is formed on the first stacked dielectric layer. The second stacked dielectric layer is formed on the N-type well and between the second doped region and the third doped region from among the three P-type doped regions. The second gate is formed on the second stacked dielectric layer.
REFERENCES:
patent: 5586073 (1996-12-01), Hiura et al.
patent: 5736764 (1998-04-01), Chang
patent: 6114724 (2000-09-01), Ratnakumar
patent: 6215700 (2001-04-01), Fong et al.
patent: 6433382 (2002-08-01), Orlowski et al.
patent: 6750102 (2004-06-01), Lancaster
patent: 6798014 (2004-09-01), Schloesser et al.
patent: 6861701 (2005-03-01), Williams et al.
patent: 6870765 (2005-03-01), Fujiwara
patent: 2002/0020872 (2002-02-01), Cremonesi et al.
patent: 2003/0227049 (2003-12-01), Sakakibara
patent: 2004/0005764 (2004-01-01), Wu et al.
patent: 2004/0235246 (2004-11-01), Wu et al.
Chen Hsin-Ming
Hsu Ching-Hsiang
Lee Hai-Ming
Shen Shih-Jye
e-Memory Technology, Inc.
Hsu Winston
Tran Thanh Y.
Wilczewski Mary
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