Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-02-27

2007-02-27

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257S057000

Reexamination Certificate

active

11083678

ABSTRACT:
According to the present invention, a pixel TFT (an n-channel TFT) having a considerably low OFF current value and a high ratio of an ON current value to an OFF current value can be realized. In a pixel portion, an electrode having a taper portion with a width of 1 μm or more is formed. An impurity region is formed by adding an impurity through the taper portion, so that the impurity region has a concentration gradient. Then, only the taper portion is removed to form the pixel TFT in the pixel portion. In the impurity region of the pixel TFT in the pixel portion, the concentration gradient is provided in a concentration distribution of the impurity imparting one conductivity, whereby a concentration is made small on the side of a channel forming region and a concentration is made large on the side of a semiconductor layer end portion.

REFERENCES:
patent: 4394182 (1983-07-01), Maddox, III
patent: 4851363 (1989-07-01), Troxell et al.
patent: 5508209 (1996-04-01), Zhang et al.
patent: 5962872 (1999-10-01), Zhang et al.
patent: 6031290 (2000-02-01), Miyazaki et al.
patent: 6114715 (2000-09-01), Hamada
patent: 6118148 (2000-09-01), Yamazaki
patent: 6259120 (2001-07-01), Zhang et al.
patent: 6365917 (2002-04-01), Yamazaki
patent: 6562669 (2003-05-01), Suzawa et al.
patent: 6587165 (2003-07-01), Hashimoto et al.
patent: 6632708 (2003-10-01), Sakama et al.
patent: 6646287 (2003-11-01), Ono et al.
patent: 6759678 (2004-07-01), Yamazaki
patent: 6884664 (2005-04-01), Fujimoto
patent: 7008828 (2006-03-01), Ono et al.
patent: 2004/0053451 (2004-03-01), Ono et al.
patent: 2006/0113597 (2006-06-01), Ono et al.
patent: 60-127761 (1985-07-01), None
patent: 04-258160 (1992-09-01), None
patent: 05-075033 (1993-03-01), None
patent: 06-148685 (1994-05-01), None
patent: 06-196494 (1994-07-01), None
patent: 07-142734 (1995-06-01), None
patent: 07-235680 (1995-09-01), None
patent: 08-264784 (1996-10-01), None
patent: 08-274336 (1996-10-01), None
patent: 2000-208778 (2000-07-01), None
patent: 2000-216396 (2000-08-01), None
patent: 2000-216398 (2000-08-01), None
patent: 2000-223716 (2000-08-01), None
patent: 2000-228527 (2000-08-01), None
patent: 2000-236097 (2000-08-01), None
patent: 2000-243975 (2000-09-01), None
patent: 2001-094113 (2001-04-01), None
patent: 2001-094116 (2001-04-01), None
patent: 2001-111060 (2001-04-01), None
patent: 2001-210832 (2001-08-01), None
Pending U.S. Appl. No. 09/433,705, including specification, claims, abstract and drawings.
Pending U.S. Appl. No. 09/436,984, including specification, claims, abstract and drawings.
Pending U.S. Appl. No. 09/447,574, including specification, claims, abstract and drawings.
Pending U.S. Appl. No. 09/464,200, including specification, claims, abstract and drawings.
Pending U.S. Appl. No. 09/471,359, including specification, claims, abstract and drawings.
Pending U.S. Appl. No. 09/714,891, including specification, claims, abstract and drawings.
Pending U.S. Appl. No. 09/432,662, including specification, claims, abstract and drawings.
Pending U.S. Appl. No. 09/435,154, including specification, claims, abstract and drawings.
Pending U.S. Appl. No. 09/441,025, including specification, claims, abstract and drawings.
Pending U.S. Appl. No. 09/454,146, including specification, claims, abstract and drawings.
Pending U.S. Appl. No. 09/618,930, including specification, claims, abstract and drawings.
Pending U.S. Appl. No. 09/619,732, including specification, claims, abstract and drawings.

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