Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-08-14
2007-08-14
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S637000, C438S690000, C216S056000
Reexamination Certificate
active
11184664
ABSTRACT:
The present invention provides a method of patterning a substrate, the method including, inter alia, forming a multi-layered structure on the substrate formed from first, second and third materials. The first, second and third materials are exposed to an etch chemistry, with the first and second materials having a common etch rate along a first direction, defining a first etch rate, and the first and third materials having a similar etch rate along a second direction, transversely extending to the first direction, defining a second etch rate. Typically, the etch rate is selected to be different in furtherance of facilitating control of the dimensions of features formed during the etching process.
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Carter Michael D.
Deo Duy-Vu N.
Fish & Richardson P.C.
George Patricia A
Molecular Imprints, Inc.
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