Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-02-13
2007-02-13
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S455000, C438S257000, C438S456000, C438S150000, C438S151000, C257SE23065, C257SE21499, C257SE21705, C257S021000, C257SE21568, C257SE21126, C257SE21658
Reexamination Certificate
active
11046411
ABSTRACT:
A method of fabricating strained silicon devices for transfer to glass for display applications includes preparing a wafer having a silicon substrate thereon; forming a relaxed SiGe layer on the silicon substrate; forming a strained silicon layer on the relaxed SiGe layer; fabricating an IC device on the strained silicon layer; depositing a dielectric layer on the wafer to cover a gate module of the IC device; smoothing the dielectric; implanting ions to form a defect layer; cutting the wafer into individual silicon dies; preparing a glass panel and the silicon dies for bonding; bonding the silicon dies onto the glass panel to form a bonded structure; annealing the bonded structure; splitting the bonded structure along the defect layer; removing the remaining silicon layer from the silicon substrate and relaxed SiGe layer on the silicon die on the glass panel; and completing the glass panel circuitry.
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Hsu Sheng Teng
Lee Jong-Jan
Maa Jer-Shen
Dinh Thu-Huong
Lindsay, Jr. Walter
Sharp Laboratories of America, Inc
Varitz PC Robert D.
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