Superjunction semiconductor device structure

Details Superjunction semiconductor device structure Superjunction semiconductor device structure

2007-10-23

2007-10-23

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29257

Reexamination Certificate

active

11057139

ABSTRACT:
In one embodiment, a charge compensation region is formed in a body of semiconductor material. A conductive layer is coupled to the charge compensation layer. In a further embodiment, the charge compensation region comprises a trench filled with opposite conductivity type semiconductor layers.

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