Method of chemically etching semiconductor substrate

Details Method of chemically etching semiconductor substrate Method of chemically etching semiconductor substrate

1988-05-17

1989-06-06

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156657, 1566591, 156662, 20412965, 252 791, 437225, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

048368881

ABSTRACT:
In a method of etching a semiconductor substrate to a desired depth from the principal surface is a selected area or selected areas by immersing the semiconductor substrate with a patterned mask such as oxide film in an etching liquid such as hydrated hydrazine, an electrode is formed on a surface of the semiconductor substrate in an area separated from the area(s) to be etched before immersing the substrate in the etching liquid. The material of the electrode is chemically stable and insusceptible to reaction with the etching liquid. In the disclosed etching method, a cathodic reduction reaction takes place on the aforementioned electrode while an anodic oxidation reaction, which causes anodic dissolution of the semiconductor material, takes place in the exposed area(s) of the semiconductor substrate. Therefore, etching is not obstacled by precipitation of the material once dissolved in the etching liquid, so that the new surface provided by etching is excellen in flatness.

REFERENCES:
patent: 4765865 (1988-08-01), Gealer et al.

Affiliated with

Also associated with

Rating

Method of chemically etching semiconductor substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of chemically etching semiconductor substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of chemically etching semiconductor substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-38753