Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-21
2007-08-21
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S348000, C257S350000, C257S351000, C257S352000, C257S353000, C257S354000, C257S507000, C257S548000, C257S610000, C257S611000, C257S612000
Reexamination Certificate
active
11097387
ABSTRACT:
A semiconductor device includes a support substrate, a buried insulation film, provided on the support substrate, having a thickness of 5 to 10 nm, a silicon layer provided on the buried insulation film, a MOSFET provided in the silicon layer, and a triple-well region provided in the support substrate under the MOSFET.
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Foley & Lardner LLP
Kabushiki Kaisha Toshiba
Soward Ida M.
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