Semiconductor thin film and method of manufacturing the same...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE29151

Reexamination Certificate

active

10843613

ABSTRACT:
A thin film semiconductor transistor structure has a substrate with a dielectric surface, and an active layer made of a semiconductor thin film exhibiting a crystallinity as equivalent to the single-crystalline. To fabricate the transistor, the semiconductor thin film is formed on the substrate, which film includes a mixture of a plurality of crystals which may be columnar crystals and/or capillary crystal substantially parallel to the substrate. The resultant structure is then subject to thermal oxidation in a chosen atmosphere containing halogen, thereby removing away any metallic element as contained in the film. This may enable formation of a mono-domain region in which the individual columnar or capillary crystal is in contact with any adjacent crystals and which is capable of being substantially deemed to be a single-crystalline region without presence or inclusion of any crystal grain boundaries therein. This region is for use in forming the active layer of the transistor.

REFERENCES:
patent: 4104675 (1978-08-01), DiMaria et al.
patent: 4231809 (1980-11-01), Schmidt
patent: 4888305 (1989-12-01), Yamazaki et al.
patent: 4904611 (1990-02-01), Chiang et al.
patent: 4905072 (1990-02-01), Komatsu et al.
patent: 5089441 (1992-02-01), Moslehi
patent: 5147826 (1992-09-01), Liu et al.
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5426064 (1995-06-01), Zhang et al.
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5488000 (1996-01-01), Zhang et al.
patent: 5492843 (1996-02-01), Adachi et al.
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5508533 (1996-04-01), Takemura
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5534716 (1996-07-01), Takemura
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5548153 (1996-08-01), Muragishi
patent: 5550070 (1996-08-01), Funai et al.
patent: 5563426 (1996-10-01), Zhang et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5569936 (1996-10-01), Zhang et al.
patent: 5580792 (1996-12-01), Zhang et al.
patent: 5585291 (1996-12-01), Ohtani et al.
patent: 5589694 (1996-12-01), Takayama et al.
patent: 5595923 (1997-01-01), Zhang et al.
patent: 5595944 (1997-01-01), Zhang et al.
patent: 5604360 (1997-02-01), Zhang et al.
patent: 5605846 (1997-02-01), Ohtani et al.
patent: 5606179 (1997-02-01), Yamazaki et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 5614426 (1997-03-01), Funada et al.
patent: 5614733 (1997-03-01), Zhang et al.
patent: 5616506 (1997-04-01), Takemura
patent: 5619044 (1997-04-01), Makita et al.
patent: 5620910 (1997-04-01), Teramoto
patent: 5621224 (1997-04-01), Yamazaki et al.
patent: 5624851 (1997-04-01), Takayama et al.
patent: 5637515 (1997-06-01), Takemura
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5646424 (1997-07-01), Zhang et al.
patent: 5654203 (1997-08-01), Ohtani et al.
patent: 5656825 (1997-08-01), Kusumoto et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5677549 (1997-10-01), Takayama et al.
patent: 5696386 (1997-12-01), Yamazaki
patent: 5696388 (1997-12-01), Funada et al.
patent: 5700333 (1997-12-01), Yamazaki et al.
patent: 5705829 (1998-01-01), Miyanaga et al.
patent: 5712191 (1998-01-01), Nakajima et al.
patent: 5744822 (1998-04-01), Takayama et al.
patent: 5744824 (1998-04-01), Kousai et al.
patent: 5756364 (1998-05-01), Tanaka et al.
patent: 5766977 (1998-06-01), Yamazaki
patent: 5773327 (1998-06-01), Yamazaki et al.
patent: 5773846 (1998-06-01), Zhang et al.
patent: 5773847 (1998-06-01), Hayakawa
patent: 5795795 (1998-08-01), Kousai et al.
patent: 5808321 (1998-09-01), Mitanaga et al.
patent: 5811327 (1998-09-01), Funai et al.
patent: 5818076 (1998-10-01), Zhang et al.
patent: 5821138 (1998-10-01), Yamazaki et al.
patent: 5824574 (1998-10-01), Yamazaki et al.
patent: 5985740 (1999-11-01), Yamazaki et al.
patent: 06-232059 (1994-08-01), None
patent: 06-244103 (1994-09-01), None
patent: 07-321339 (1995-12-01), None
Shimokawa et al., “Characterization of High-Efficiency Cast-Si Solar Cell Wafers by MBIC Measurement,” Japanese Journal of Applied Physics, vol. 27;May 5, 1988; pp. 751-758.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor thin film and method of manufacturing the same... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor thin film and method of manufacturing the same..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor thin film and method of manufacturing the same... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3873307

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.