Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-23
2007-10-23
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S421000, C257S422000, C257SE27005, C438S033000, C438S257000, C438S508000
Reexamination Certificate
active
11513244
ABSTRACT:
The present invention provides an MRAM cell which minimizes the occurrence of electrical shorts during fabrication. A first conductor is provided in a trench in an insulating layer and an upper surface of the insulating layer and the first conductor is planarized. A first dielectric layer is deposited over the first conductor and insulating layer to a thickness at least greater than the thickness of a desired MRAM cell. The first dielectric layer is patterned and etched to form an opening over the first conductor for the cell shapes. The magnetic layers comprising the MRAM cell are consecutively formed within the cell shapes and the first dielectric layer.
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Nanoscale and Novel Engineered Materials, S.J. Pearton, University of Florida, Slide Show of “Plasma Etching of GMR and CMR Materials,” Jan. 22, 1998, web address www.phys.ufl.edu/˜nanoscale/welcome.html/.
Mercaldi Garry A.
Yates Donald L.
Dickstein & Shapiro LLP
Le Dung A.
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