Compound semiconductor element based on Group III element...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

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C257S085000, C257S200000, C257S615000

Reexamination Certificate

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10466185

ABSTRACT:
In the present invention, (Ti1−xAx)N [in which A is at least one kind of metal selected from the group consisting of Al, Ga, and In] is used as a metal nitride layer, so that a Group III nitride compound semiconductor layer is formed on the metal nitride layer. When a Ti layer is formed between the metal nitride layer having a sufficient thickness and a substrate and the titanium layer is removed, a Group III nitride compound semiconductor device using metal nitride as a substrate can be obtained.

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Ren, Jian Z., et al., “Atomic Structure and phase transitions in disordered Til-xGaxN thin films grown by pulsed laser deposition”, Journal of Applied Physics vol. 83, No. 12, Jun. 15, 1998.

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