Transistor array substrate fabrication for an LCD

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S030000, C438S149000, C438S159000

Reexamination Certificate

active

11175707

ABSTRACT:
A fabrication process for transistor array substrates of different sizes on a common substrate provides quality control, yield, and space efficiency advantages. In particular, a four-mask process, including a mask with diffraction slits, may be employed to fabricate transistors that share common channel characteristics for each of the transistor array substrates.

REFERENCES:
patent: 6255130 (2001-07-01), Kim
patent: 6762081 (2004-07-01), Yamazaki et al.
patent: 6797535 (2004-09-01), Tanabe

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