Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-12-25
2007-12-25
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S030000, C438S149000, C438S159000
Reexamination Certificate
active
11175707
ABSTRACT:
A fabrication process for transistor array substrates of different sizes on a common substrate provides quality control, yield, and space efficiency advantages. In particular, a four-mask process, including a mask with diffraction slits, may be employed to fabricate transistors that share common channel characteristics for each of the transistor array substrates.
REFERENCES:
patent: 6255130 (2001-07-01), Kim
patent: 6762081 (2004-07-01), Yamazaki et al.
patent: 6797535 (2004-09-01), Tanabe
Jung Jo-Hann
Kang Kyung-Kyu
Kim Jeong-Rok
Nam Myung-Woo
Shin Jae-Deuk
Brinks Hofer Gilson & Lione
Le Dung A.
LG. Philips LCD Co., Ltd
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