Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-08-21
2007-08-21
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C427S472000, C427S483000, C257SE21487
Reexamination Certificate
active
10947016
ABSTRACT:
A method of forming a thin film on a substrate to fabricate a microelectronic device, a microelectronic device comprising a thin film deposited according to the method, and a system comprising the microelectronic device. The thin film may include on of a low k thin film, a thin film comprising photoresist, and a sacrificial polymer. The method comprises dispersing a precursor preparation into a spray of charged droplets through subjecting the liquid precursor preparation to electrostatic forces; directing the charged droplets to move toward the substrate; and allowing the charged droplets to generate a beam of gas-phase ions as the charged droplets move toward the substrate. The method further includes directing the gas-phase ions to impinge upon the substrate to deposit the thin film thereon to yield a deposited thin film on the substrate.
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Intel Corporation
Jalall Laleh
Smoot Stephen W.
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