Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-11
2007-12-11
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S459000, C257S341000, C257S343000, C257SE21159
Reexamination Certificate
active
10954763
ABSTRACT:
A method for processing a semiconductor substrate less than 200 μm thick has been provided. The substrate has one or a plurality of semiconductor elements, which may be identical or different. The substrate is arranged onto a chuck during processing, the front side of the substrate facing the chuck. During processing, an electrically conductive film, for example, made of metal, may be applied on the rear side of the substrate. The film may serve as electrical contact, heat sink or mechanical stabilizer.
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Dicke Billig & Czaja, PLLC
Fourson George
Infineon - Technologies AG
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