Methods of forming a metal layer using transition metal...

Details Methods of forming a metal layer using transition metal... Methods of forming a metal layer using transition metal...

2007-10-23

2007-10-23

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S681000, C438S682000, C438S683000

Reexamination Certificate

active

10818718

ABSTRACT:
Methods for depositing a metal layer on an integrated circuit device comprising providing a transition metal precursor, carrier gas and hydrogen gas to a deposition chamber such that the partial pressure of the precursor and carrier gas exceeds about 0.25 Torr and the partial pressure of hydrogen gas exceeds about 2.5 Torr are disclosed. Methods of forming a cobalt layer on an integrated circuit device are also disclosed.

REFERENCES:
patent: 4814294 (1989-03-01), West et al.
patent: 6346477 (2002-02-01), Kaloyeros et al.
patent: 6444263 (2002-09-01), Paranjpe et al.
Rhee et al., “Epitaxial growth of a (100) CoSi2layer from carbonic cobalt films deposited on (100) Si substrate using an organometallic source”,Applied Physics Letter, vol. 74, No. 7, pp. 1003-1005.
Rhee et al., “Cobalt Metallorganic Chemical Vapor Deposition and Formation of Epitaxial CoSi2Layeron Si(100) Substrate”,Journal of The Electrochemical Society, 146(7) 2720-2724 (1999).
Ivanova et al., “The Effects of Processing Parameters in the Chemical Vapor Deposition of Cobalt from Cobalt Tricarbonyl Nitrosyl”Journal of The Electrochemical Society, 146 (6) 2139-2145 (1999).

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